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ESD0P2RF Series
Characteristics
Table 2-2
DC Characteristics at T A = 25 °C, unless otherwise specified
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit
Note /
Test Condition
Reverse working voltage V RWM
–5.3
–
5.3
V
Breakdown voltage
V BR
7
–
–
V
I R = 1 mA,
from pin 1 to pin 2,
from pin 2 to pin 1
Reverse current
I R
–
<1
50
nA
V R = 5.3 V
Table 2-3
RF Characteristics at T A = 25 °C, unless otherwise specified
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit
Note /
Test Condition
Diode capacitance
C L
–
–
0.23
0.2
0.4
0.4
pF
pF
V R = 0 V, f = 1 MHz
V R = 0 V, f = 1 GHz
Table 2-4
ESD Characteristics at T A = 25 °C, unless otherwise specified
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit
Note /
Test Condition
Clamping voltage 2)
V CL
–
29
–
V
I TLP = 16 A
–
38
–
I TLP = 30 A
Clamping voltage
1)
–
–
11
15
17
21
I PP = 1 A
I PP = 3 A
Dynamic resistance
2)
R DYN
–
1
–
?
Series inductance
L S
–
–
0.2
0.4
–
–
nH
nH
ESD0P2RF-02LS
ESD0P2RF-02LRH
1) I PP according to IEC61000-4-5 ( t p = 8/20 μs)
2) Please refer to Application Note AN210 [4] . TLP parameter: Z 0 = 50 Ω , t p = 100ns, t r = 300ps, averaging window: t 1 = 30 ns
to t 2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP charactertistics between I TLP1 = 10 A and
I TLP2 = 40 A.
Final Data Sheet
6
Rev. 1.2, 2012-10-01
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